The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 24, 2009
Shirofumi Yamagishi, Nasushiobara, JP;
Hitoshi Chiyoma, Otawara, JP;
Shirofumi Yamagishi, Nasushiobara, JP;
Hitoshi Chiyoma, Otawara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electron Tubes & Devices Co., Ltd., Tochigi-ken, JP;
Abstract
In a radiation detector in which scintillator layers are directly formed on all the light receiving parts of a plurality of photoelectric conversion substrates, space and level difference between the adjacent photoelectric conversion substrates are determined so that the effects of these space and level difference fall within a range corresponding to the effect of one photoelectric conversion element. Specifically, the space between the adjacent photoelectric conversion substrates is equal to or less than 133 μm and the level difference between the adjacent photoelectric conversion substrates is equal to or less than 100 μm. Accordingly, the scintillator layers can be directly formed on all the light receiving parts of the plurality of photoelectric conversion substrates. This prevents degradation in MTF and sensitivity and reduces manufacturing costs.