The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 01, 2007
Huaqiang Wu, Mountain View, CA (US);
Michael G. Spencer, Ithaca, NY (US);
Emmanuel Giannelis, Ithaca, NY (US);
Athanasios Bourlinos, Ithaca, NY (US);
Huaqiang Wu, Mountain View, CA (US);
Michael G. Spencer, Ithaca, NY (US);
Emmanuel Giannelis, Ithaca, NY (US);
Athanasios Bourlinos, Ithaca, NY (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
The invention provides a composition that is a dispersion made from a Group III nitride, a solvent system, and a dispersant. The dispersion can be used to prepare Group III nitride thin films on a wide range of substrates, for example, glass, silicon, silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, sapphire, and organic polymers. The particle size of the Group III nitride used for producing the thin films can be controlled by adjusting centrifugation of the dispersion and selecting a desired layer of supernatant. The dispersant can be removed from the thin films by calcination. The Group III nitride can contain a dopant. Doped Group III nitride thin films can emit visible light upon irradiation. Green, red, and yellow light emissions result from irradiating erbium-, europium-, and cerium-doped gallium nitride, respectively.