The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Sep. 29, 2006
Applicants:

Suk-joon Son, Gyeonggi-do, KR;

Jong-ho Park, Seoul, KR;

Hyun-suk Kim, Gyeonggi-do, KR;

Inventors:

Suk-Joon Son, Gyeonggi-do, KR;

Jong-Ho Park, Seoul, KR;

Hyun-Suk Kim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnection structure includes an inter-level insulation layer disposed on a semiconductor substrate. First contact structures are formed in the inter-level insulation layer. Second contact structures are formed in the inter-level insulation layer and are spaced apart from the first contact structures. First spacers are disposed between the first contact structures and the inter-level insulation layer. Second spacers are disposed between the second contact structures and the inter-level insulation layer. Metal interconnections are disposed on the inter-level insulation layer and connected to the first and second contact structures. The first contact structures include first and second plugs stacked in sequence, the second contact structures include the second plugs, and the first spacers include an upper spacer disposed between the second plug and the inter-level insulation layer.


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