The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 08, 2009
Yasuhiko Matsunaga, Kanagawa, JP;
Yasuhiko Matsunaga, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory that allows simultaneous implementation of high performance transistors in a low-voltage circuit region and transistors with high withstand voltages in a high-voltage circuit region. The nonvolatile semiconductor memory includes a cell array region that comprises aligned memory cell transistors, each including a control gate electrode, which includes a metal silicide film, an inter-gate insulating film below the control gate electrode, a floating gate electrode below the inter-gate insulating film, and a tunnel insulating film under the floating gate electrode; a high-voltage circuit region arranged in a periphery of the cell array region and including a high voltage transistor, which includes a first gate insulating film thicker than the tunnel insulating film; and a low-voltage circuit region that is arranged in a different position than the high-voltage circuit region arranged in the periphery of the cell array region and that includes a low-voltage transistor, which includes a gate electrode and a second gate insulating film thinner than the first gate insulating film below the gate electrode.