The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 11, 2007
Reiner Jumpertz, Freising, DE;
Klaus Schimpf, Freising, DE;
Reiner Jumpertz, Freising, DE;
Klaus Schimpf, Freising, DE;
Texas Instruments Deutschland GmbH, Freising, DE;
Abstract
A method of fabricating an integrated BiCMOS circuit is provided, the circuit including bipolar transistorsand CMOS transistorson a substrate. The method comprises the step of forming an epitaxial layerto form a channel region of a MOS transistor and a base region of a bipolar transistor. Growing of the epitaxial layer includes growing a first sublayer of silicon, a first sublayer of silicon-germanium 28onto the first sublayer of silicon, a second sublayer of silicononto the first sublayer of silicon-germanium, and a second sublayer of silicon-germaniumonto the second sublayer of silicon. Furthermore, an integrated BiCMOS circuit is provided, which includes an epitaxial layeras described above.