The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jan. 16, 2008
Ashesh Parikh, Frisco, TX (US);
Andrew Marshall, Dallas, TX (US);
Ashesh Parikh, Frisco, TX (US);
Andrew Marshall, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of fabricating graphene transistors, comprising providing an SOI substrate, performing an optional threshold implant on the SOI substrate, forming an upper silicon layer mesa island, carbonizing the silicon layer into SiC utilizing a gaseous source, converting the SiC into graphene, forming source/drain regions on opposite longitudinal ends of the graphene, forming gate oxide between the source/drain regions on the graphene, forming gate material over the gate oxide, creating a transistor edge, depositing dielectric onto the transistor edge and performing back end processing.