The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Nov. 12, 2002
Tadashi Mitsui, Ibaraki, JP;
Takashi Sekiguchi, Ibaraki, JP;
Mika Gamo, Ibaraki, JP;
Yafei Zhang, Ibaraki, JP;
Toshihiro Ando, Ibaraki, JP;
Tadashi Mitsui, Ibaraki, JP;
Takashi Sekiguchi, Ibaraki, JP;
Mika Gamo, Ibaraki, JP;
Yafei Zhang, Ibaraki, JP;
Toshihiro Ando, Ibaraki, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Abstract
A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube () is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (HS) is introduced in addition to a primary reactant (CH, H) in the process to form a monolayer carbon nanotube ().