The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Aug. 09, 2007
Applicants:

Tetsuo Tsuchiya, Ibaraki, JP;

Tomohiko Nakajima, Ibaraki, JP;

Akio Watanabe, Ibaraki, JP;

Toshiya Kumagai, Ibaraki, JP;

Inventors:

Tetsuo Tsuchiya, Ibaraki, JP;

Tomohiko Nakajima, Ibaraki, JP;

Akio Watanabe, Ibaraki, JP;

Toshiya Kumagai, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 21/02 (2006.01); C04B 35/64 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.


Find Patent Forward Citations

Loading…