The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Oct. 20, 2008
Yeonjoon Park, Yorktown, VA (US);
Sang Hyouk Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Yorktown, VA (US);
Albert L. Dimarcantonio, Williamsburg, VA (US);
Yeonjoon Park, Yorktown, VA (US);
Sang Hyouk Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Yorktown, VA (US);
Albert L. Dimarcantonio, Williamsburg, VA (US);
Abstract
A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.