The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Feb. 28, 2005
Yasuhiko Nomura, Moriguchi, JP;
Yasuyuki Bessho, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Tsutomu Yamaguchi, Nara, JP;
Yasuhiko Nomura, Moriguchi, JP;
Yasuyuki Bessho, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Tsutomu Yamaguchi, Nara, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LDwafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LDwafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.