The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Nov. 15, 2006
Arpan Chakraborty, Goleta, CA (US);
Monica Hansen, Santa Barbara, CA (US);
Steven Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
George Brandes, Raleigh, NC (US);
Arpan Chakraborty, Goleta, CA (US);
Monica Hansen, Santa Barbara, CA (US);
Steven Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
George Brandes, Raleigh, NC (US);
Cree, Inc., Goleta, CA (US);
Abstract
A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.