The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Apr. 12, 2005
Yasutoshi Tasaka, Matsusaka, JP;
Hidefumi Yoshida, Machida, JP;
Kunihiro Tashiro, Matsusaka, JP;
Yoshinori Tanaka, Yonago, JP;
Seiji Doi, Katsuragi, JP;
Tomoshige Oda, Yonago, JP;
Isao Tsushima, Herts, GB;
Yasutoshi Tasaka, Matsusaka, JP;
Hidefumi Yoshida, Machida, JP;
Kunihiro Tashiro, Matsusaka, JP;
Yoshinori Tanaka, Yonago, JP;
Seiji Doi, Katsuragi, JP;
Tomoshige Oda, Yonago, JP;
Isao Tsushima, Herts, GB;
Fujitsu Limited, Kawasaki, JP;
Au Optronics Corporation, Hsinchu, TW;
Abstract
Opening portions (opening patterns) having different arrangement pitches and sizes are formed in first metal film patterns, a first semiconductor film, second metal film patterns, a third insulating film, and the like under a reflective electrode, respectively. These opening portions overlap each other complexly to form fine bumps and dips in the surface of the reflective electrode. Further, the opening portions can be formed in the first metal film patterns, the first semiconductor film, and the second metal film patterns simultaneously with the formation of TFTs. Accordingly, an increase in the number of steps can be avoided.