The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2010

Filed:

Aug. 01, 2007
Applicants:

Abheek Gupta, San Diego, CA (US);

Vaishnav Srinivas, San Diego, CA (US);

Vivek Mohan, San Diego, CA (US);

Inventors:

Abheek Gupta, San Diego, CA (US);

Vaishnav Srinivas, San Diego, CA (US);

Vivek Mohan, San Diego, CA (US);

Assignee:

QUALCOMM, Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatuses are presented for voltage tolerant floating N-well circuits. An apparatus for mitigating leakage currents caused by input voltages is presented which includes a first transistor having a source coupled to a positive voltage supply, and a drain coupled to a floating node. The apparatus may further include a controllable pull-down path coupled to a negative voltage supply and the first transistor, wherein the controllable pull-down path is configured to turn on the first transistor and pull-up the floating node during a first state. The apparatus may further include a second transistor having a source coupled to a gate of the first transistor, and drain coupled to the floating node, wherein the second transistor is configured to place the floating node at a floating potential during a second state.


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