The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7768081 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 03, 2010

Filed:

Oct. 20, 2005
Applicants:

Abraham Rudolf Balkenende, Eindhoven, NL;

Erik Petrus Antonius Maria Bakkers, Eindhoven, NL;

Louis Felix Feiner, Eindhoven, NL;

Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.


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Balkenende, Abraham. (2010). Semiconductor device with tunable energy band gap (U.S. Patent No. 7768081). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7768081

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