The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Aug. 01, 2008
Tzong-liang Tsai, Taichung, TW;
Wei-kai Wang, Shengang Township, Taichung County, TW;
Su-hui Lin, Taichung, TW;
Yi-cun LU, Taichung, TW;
Tzong-Liang Tsai, Taichung, TW;
Wei-Kai Wang, Shengang Township, Taichung County, TW;
Su-Hui Lin, Taichung, TW;
Yi-Cun Lu, Taichung, TW;
Huga Optotech Inc., Taichung, TW;
Abstract
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.