The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Nov. 13, 2007
Applicants:
Mamoru Ishizaki, Tokyo, JP;
Manabu Ito, Tokyo, JP;
Masato Kon, Tokyo, JP;
Osamu Kina, Tokyo, JP;
Ryohei Matsubara, Tokyo, JP;
Inventors:
Mamoru Ishizaki, Tokyo, JP;
Manabu Ito, Tokyo, JP;
Masato Kon, Tokyo, JP;
Osamu Kina, Tokyo, JP;
Ryohei Matsubara, Tokyo, JP;
Assignee:
Toppan Printing Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.