The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Sep. 14, 2007
Applicants:
Meng Tao, Colleyville, TX (US);
Longcheng Wang, Arlington, TX (US);
Inventors:
Meng Tao, Colleyville, TX (US);
Longcheng Wang, Arlington, TX (US);
Assignee:
Board of Regents, The University of Texas System, Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.
Tao, Meng. (2010). Formation of p-n homogeneous junctions (U.S. Patent No. 7768003). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7768003
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile