The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Sep. 28, 2007
Seung-hwan Cho, Hwaseong-si, KR;
Bo-sung Kim, Seoul, KR;
Keun-kyu Song, Yongin-si, KR;
Tae-young Choi, Seoul, KR;
Min-ho Yoon, Seoul, KR;
Jung-hun Noh, Yongin-si, KR;
Seung-Hwan Cho, Hwaseong-si, KR;
Bo-Sung Kim, Seoul, KR;
Keun-Kyu Song, Yongin-si, KR;
Tae-Young Choi, Seoul, KR;
Min-Ho Yoon, Seoul, KR;
Jung-Hun Noh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.