The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Aug. 21, 2006
Hirotaka Nishino, Yokohama, JP;
Koichi Kato, Yokohama, JP;
Hirotaka Nishino, Yokohama, JP;
Koichi Kato, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen bonds, aluminum-oxygen bonds, transition metal-oxygen-silicon bonds, transition metal-oxygen-aluminum bonds, and transition metal-oxygen bonds on either a film having a semiconductor as a main component or a semiconductor substrate, and irradiating the insulation film with pulse infrared light having a wavelength corresponding to a maximum intensity in a wavelength region depending upon the insulation film and having a wavelength absorbed by the insulation film.