The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Dec. 05, 2005
Doo-hyeb Youn, Daejeon, KR;
Hyun-tak Kim, Daejeon, KR;
Byung-gyu Chae, Daejeon, KR;
Sung-lyul Maeng, Cheongju, KR;
Kwang-yong Kang, Daejeon, KR;
Doo-Hyeb Youn, Daejeon, KR;
Hyun-Tak Kim, Daejeon, KR;
Byung-Gyu Chae, Daejeon, KR;
Sung-Lyul Maeng, Cheongju, KR;
Kwang-Yong Kang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.