The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
May. 13, 2004
Katsutoshi Takagi, Kobe, JP;
Junichi Nakai, Kobe, JP;
Yuuki Tauchi, Kobe, JP;
Toshiki Sato, Kobe, JP;
Hitoshi Matsuzaki, Takasago, JP;
Hideo Fujii, Takasago, JP;
Katsutoshi Takagi, Kobe, JP;
Junichi Nakai, Kobe, JP;
Yuuki Tauchi, Kobe, JP;
Toshiki Sato, Kobe, JP;
Hitoshi Matsuzaki, Takasago, JP;
Hideo Fujii, Takasago, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe-shi, JP;
Kobelco Research Institute Inc., Kobe-shi, JP;
Abstract
The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.