The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Nov. 18, 2004
Marie-claire Cyrille, San Jose, CA (US);
Elizabeth Ann Dobisz, San Jose, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Jui-lung LI, San Jose, CA (US);
Marie-Claire Cyrille, San Jose, CA (US);
Elizabeth Ann Dobisz, San Jose, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Jui-Lung Li, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.