The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Dec. 15, 2005
Christopher L. Chua, San Jose, CA (US);
Michael A. Kneissl, Berlin, DE;
Noble M. Johnson, Menlo Park, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Christopher L. Chua, San Jose, CA (US);
Michael A. Kneissl, Berlin, DE;
Noble M. Johnson, Menlo Park, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.