The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jul. 18, 2008
Kyoung Lae Cho, Yongin-si, KR;
Dong Hun Yu, Seoul, KR;
Jun Jin Kong, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Yoon Dong Park, Yongin-si, KR;
Jong Han Kim, Suwon-si, KR;
Young Hwan Lee, Suwon-si, KR;
Kyoung Lae Cho, Yongin-si, KR;
Dong Hun Yu, Seoul, KR;
Jun Jin Kong, Yongin-si, KR;
Seung-Hwan Song, Incheon, KR;
Yoon Dong Park, Yongin-si, KR;
Jong Han Kim, Suwon-si, KR;
Young Hwan Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage.