The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jan. 11, 2008
Seong-ook Jung, Seoul, KR;
Seung H. Kang, San Diego, CA (US);
Sei Seung Yoon, San Diego, CA (US);
Mehdi Hamidi Sani, Rancho Santa Fe, CA (US);
Seong-Ook Jung, Seoul, KR;
Seung H. Kang, San Diego, CA (US);
Sei Seung Yoon, San Diego, CA (US);
Mehdi Hamidi Sani, Rancho Santa Fe, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region of the word line transistor.