The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2010

Filed:

Feb. 22, 2007
Applicants:

Jin-man Kim, Gyeonggi-do, KR;

Yun-sik Yang, Gyeonggi-do, KR;

Young-min Min, Gyeonggi-do, KR;

Sang-ho Kim, Gyeonggi-do, KR;

Inventors:

Jin-Man Kim, Gyeonggi-do, KR;

Yun-Sik Yang, Gyeonggi-do, KR;

Young-Min Min, Gyeonggi-do, KR;

Sang-Ho Kim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02N 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.


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