The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7764475 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 27, 2010

Filed:

Dec. 27, 2006
Applicants:

Myung-hee Sung, Hwaseong-si, KR;

Young-man Ahn, Yongin-si, KR;

Inventors:

Myung-Hee Sung, Hwaseong-si, KR;

Young-Man Ahn, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-mode electrostatic discharge (ESD) circuit for a semiconductor chip comprises first and second ESD diodes. In a first mode, a body voltage greater than a power source voltage of the semiconductor chip is applied to the first ESD diode and a body voltage less than a ground voltage of the semiconductor chip is applied to the second ESD diode. In a second mode, a body voltage substantially equal to the power source voltage of the semiconductor chip is applied to the body of the first ESD diode and a body voltage substantially equal to the ground voltage of the semiconductor chip is applied to the second ESD diode.


Find Patent Forward Citations

Sung, Myung-Hee. (2010). Electrostatic discharge circuit and method for reducing input capacitance of semiconductor chip including same (U.S. Patent No. 7764475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7764475

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