The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jul. 29, 2003
John M. Shannon, Whyteleafe, GB;
Edmund G. Gerstner, Cambridge, GB;
John M. Shannon, Whyteleafe, GB;
Edmund G. Gerstner, Cambridge, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A transistor has a source electrode () on the opposite side of a semiconductor body layer () to a gate electrode () insulated from the body layer () by gate insulator (). The source electrode () has a potential barrier to the semiconductor body layer (), for example a Schottky barrier. At least one drain electrode () is also connected to the semiconductor body layer (). A suitable source-drain voltage and gate voltage depletes the region of the semiconductor body layer adjacent to the source electrode (), and then source-drain current is controlled by the gate voltage.