The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Nov. 15, 2006
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus are provided for semiconductor device (). The semiconductor device (), comprises a first region () of a first conductivity type extending to a first surface (), a second region () of a second, opposite, conductivity type forming with the first region () a first PN junction () extending to the first surface (), a contact region () of the second conductivity type in the second region () at the first surface () and spaced apart from the first PN junction () by a first distance (L), and a third region (-) of the first conductivity type and of a second length (L), underlying the second region () and forming a second PN junction () therewith spaced apart from the first surface () and located closer to the first PN junction () than to the contact region (). The breakdown voltage is enhanced without degrading other useful properties of the device ().