The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 08, 2005
Antonello Santangelo, Belpasso, IT;
Salvatore Cascino, Gravina Di Catania, IT;
Leonardo Gervasi, Aci S. Antonio, IT;
Antonello Santangelo, Belpasso, IT;
Salvatore Cascino, Gravina Di Catania, IT;
Leonardo Gervasi, Aci S. Antonio, IT;
STMicroelectronics, S.r.l., Agrate Brianza, IT;
Abstract
A lateral MOS device is formed in a body having a surface and is formed by a semiconductor layer of a first conductivity type; a drain region of a second conductivity type, formed in the semiconductor layer and facing the surface; a source region of the second conductivity type, formed in the semiconductor layer and facing the surface; a channel of the first conductivity type, formed in the semiconductor layer between the drain region and the source region and facing the surface; and an insulated gate region, formed on top of the surface over the channel region. In order to improve the dynamic performance, a conductive region extends only on one side of the insulated gate region, on top of the drain region but not on top of the insulated gate region.