The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Mar. 20, 2009
Toshiharu Marui, Tokyo, JP;
Fumihiko Toda, Tokyo, JP;
Shinichi Hoshi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.