The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 29, 2006
Liang-wen Wu, Tao-Yung Hsien, TW;
Fen-ren Chien, Tao-Yung Hsien, TW;
Liang-Wen Wu, Tao-Yung Hsien, TW;
Fen-Ren Chien, Tao-Yung Hsien, TW;
Formosa Epitaxy Incorporation, Tao-Yung Hsien, TW;
Abstract
A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped AlGaN based material layer (0≦x<1) and at least a tunneling junction layer is provided. The first type doped semiconductor layer is disposed on the substrate, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The Indium-doped AlGaN based material layer is disposed on at least one surface of the light emitting layer, and the tunneling junction layer is disposed between the Indium-doped AlGaN based material layer and the first type doped semiconductor layer and/or disposed between the Indium-doped AlGaN based material layer and the second type doped semiconductor layer, wherein the Indium-doped AlGaN based material layer and the tunneling junction layer are disposed on the same side of the light emitting layer.