The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jan. 20, 2006
Applicants:
Kouhei Miura, Osaka, JP;
Makoto Kiyama, Itami, JP;
Takashi Sakurada, Osaka, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode () consists of a Group III nitride support substrate (), a gallium nitride region (), and a Schottky electrode (). The Group III nitride support substrate () has electrical conductivity. The Schottky electrode () forms a Schottky junction on the gallium nitride region (). The gallium nitride region () is fabricated on a principal face () of the Group III nitride support substrate (). The gallium nitride region () has a (102)-plane XRD full-width-at-half-maximum of 100 sec or less.