The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Oct. 31, 2007
Yoon-ho Khang, Yongin-si, KR;
Daniel Wamwangi, Aachen, DE;
Matthias Wuttig, Aachen, DE;
Ki-joon Kim, Yongin-si, KR;
Dong-seok Suh, Yongin-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Daniel Wamwangi, Aachen, DE;
Matthias Wuttig, Aachen, DE;
Ki-joon Kim, Yongin-si, KR;
Dong-seok Suh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a GeSbTe(GST) material. The phase change material may be InSbTeSe. The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z≦75 wt %.