The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 07, 2007
Johannes Von Kluge, Dresden, DE;
Stefan Tegen, Dresden, DE;
Johannes von Kluge, Dresden, DE;
Stefan Tegen, Dresden, DE;
Qimonda AG, Munich, DE;
Abstract
A transistor of an integrated circuit includes a first and second source/drain regions, a channel region connecting the first and second source/drain regions, and a gate electrode configured to control an electrical current flowing in the channel. The gate electrode is disposed in a gate groove, that is defined in a top surface of a semiconductor substrate. The first and second source/drain regions extend at least to a depth d, wherein the depth dis measured from the top surface of the substrate. A top surface of the gate electrode is disposed beneath the top surface of the semiconductor substrate in a distance to the top surface that is less than the depth d
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile