The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jul. 18, 2008
Robertus Theodorus Fransiscus Van Schaijk, Leuven, BE;
Michiel Jos Van Duuren, Leuven, BE;
Robertus Theodorus Fransiscus Van Schaijk, Leuven, BE;
Michiel Jos Van Duuren, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface (), and a device thus manufactured. The method comprises:—forming, on the substrate surface, a stack comprising an insulating film (), a first layer of floating gate material () and a layer of sacrificial material (),—forming at least one isolation zone () through the stack and into the substrate (), the first layer of floating gate material () thereby having a top surface and side walls (),—removing the sacrificial material (), thus leaving a cavity () defined by the isolation zones () and the top surface of the first layer of floating gate material (), and filling the cavity () with a second layer of floating gate material (), the first layer of floating gate material () and the second layer of floating gate material () thus forming together a floating-gate ().