The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7763394 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 27, 2010

Filed:

Jan. 26, 2005
Applicant:

Jean-louis Stehle, Colombes, FR;

Inventor:

Jean-Louis Stehle, Colombes, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/14 (2006.01); A61N 5/00 (2006.01); G03B 27/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A mask (MM) with patterns (MF) for use in a reflection lithography device with a photon beam with a wavelength of less than about 120 nm. Said mask (MM) comprises a planar substrate (ST) fixed to a reflecting structure (SMR) comprising a front face provided with selected patterns (MF) made from a material which is absorbent at the given wavelength and further comprises protection means (SP) which are transparent to the given wavelength and arranged such as to maintain a distance (H) between the perturbing particles (PP) and the patterns (MF) greater than or equal to one of the values of the depth of focus of the lithographic device and the height associated with the percentage of photon absorption by the perturbing particles (PP) which is acceptable.


Find Patent Forward Citations

Stehle, Jean-Louis. (2010). Protected pattern mask for reflection lithography in the extreme uv or soft x-ray range (U.S. Patent No. 7763394). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7763394

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