The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2010

Filed:

Mar. 01, 2007
Applicants:

Andreas Kienzle, Balgheim, DE;

Johann Daimer, Mörfelden-Walldorf, DE;

Rudi Beck, Mönchsdeggingen, DE;

Otto Mederle, Meitingen, DE;

Matthieu Schwartz, Augsburg, DE;

Jens Rosenlöcher, Augsburg, DE;

Inventors:

Andreas Kienzle, Balgheim, DE;

Johann Daimer, Mörfelden-Walldorf, DE;

Rudi Beck, Mönchsdeggingen, DE;

Otto Mederle, Meitingen, DE;

Matthieu Schwartz, Augsburg, DE;

Jens Rosenlöcher, Augsburg, DE;

Assignee:

Audi AG, Ingolstadt, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 31/36 (2006.01); B05C 3/09 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature T1, feeding liquid silicon to the porous carbon workpieces at an operating pressure p2 and an operating temperature T2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature T3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature T3 to the conditioning temperature T, cooling the workpieces to room temperature, the temperature T3 being greater than or equal to the temperature T2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.


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