The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 12, 2005
Shuji Noda, Matsue, JP;
Takanobu Shiomura, Matsue, JP;
Masahiro Tajima, Matsue, JP;
Naoto Imawaka, Matsue, JP;
Yasuaki Okamoto, Matsue, JP;
Takeshi Kubota, Matsue, JP;
Shuji Noda, Matsue, JP;
Takanobu Shiomura, Matsue, JP;
Masahiro Tajima, Matsue, JP;
Naoto Imawaka, Matsue, JP;
Yasuaki Okamoto, Matsue, JP;
Takeshi Kubota, Matsue, JP;
Shimane Prefectural Government, Matsue-shi, JP;
Shimane University, Matsue-shi, JP;
Abstract
In a synthetic method for porous silica crystals through a hydrothermal reaction, a method for synthesizing porous silica crystals with a size of 0.5 mm or larger in high reproducibility and efficiency is provided using a method for manufacturing the porous silica crystals, wherein a high concentration area with silicon is formed as a partial area inside a hydrothermal synthesis vessel, and at least a part of a surface-smoothed bulk material is present in the high concentration area with silicon to perform the hydrothermal reaction, the bulk material comprising a compound containing both silicon and oxygen as a supply source for a part or a whole of the structure composition elements of the porous silica crystals.