The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 21, 2006
Eiji Takahashi, Kyoto, JP;
Hirokazu Kaki, Kyoto, JP;
Eiji Takahashi, Kyoto, JP;
Hirokazu Kaki, Kyoto, JP;
Nissin Electric Co., Ltd., Kyoto, JP;
Abstract
A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 between an emission spectral intensity Hα of hydrogen atom radicals at a wavelength of 656 nm and an emission spectral intensity SiH* of silane radicals at a wavelength of 414 nm in plasma emission, and chemical sputtering is effected on the silicon sputter target by the plasma to form a crystalline silicon thin film on the deposition target object. Thereafter a high-frequency power is applied to a terminally treating gas to generate plasma for terminating treatment and the surface of the crystalline silicon thin film is terminally treated by the plasma in the terminally treating chamber.