The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Aug. 26, 2004
Tomonori Noguchi, Ibaraki, JP;
Hidehiko Andou, Ibaraki, JP;
Hidetoshi Yoshitake, Ibaraki, JP;
Hideo Sugawara, Ibaraki, JP;
Tomonori Noguchi, Ibaraki, JP;
Hidehiko Andou, Ibaraki, JP;
Hidetoshi Yoshitake, Ibaraki, JP;
Hideo Sugawara, Ibaraki, JP;
Nitto Denko Corporation, Osaka, JP;
Abstract
A process for producing a transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding is provided. The transparent conductive layer is excellent in transparency and wet heat confidence, is not excessively low in specific resistivity, and has no variation on optical properties such as retardation characteristic. The transparent conductive laminate is obtained by sputter-film forming a transparent conductive layer on a substrate comprising an organic polymer molding under conditions of a substrate temperature of 80-150° C. and a degree of vacuum of 8×10Pa or lower to form an amorphous transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1-6 % by weight based on the total weight of In atom and Sn atom and having a film thickness of 15-30 nm, a Hall mobility of 15-28 cmV·S, and a carrier density of 2×10/cmto 5×10/cm, and heat treating the layer at a temperature lower than 120° C., to convert it into a completely crystallized transparent conductive layer having a Hall mobility of 30-45 cm/V·S and a carrier density of 2×10/cmto 7×10/cm.