The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jun. 05, 2006
Anthony Buonassisi, San Diego, CA (US);
Matthias Heuer, Berkeley, CA (US);
Andrei A. Istratov, Albany, CA (US);
Matthew D. Pickett, Berkeley, CA (US);
Mathew A. Marcus, Berkeley, CA (US);
Eicke R. Weber, Piedmont, CA (US);
Anthony Buonassisi, San Diego, CA (US);
Matthias Heuer, Berkeley, CA (US);
Andrei A. Istratov, Albany, CA (US);
Matthew D. Pickett, Berkeley, CA (US);
Mathew A. Marcus, Berkeley, CA (US);
Eicke R. Weber, Piedmont, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.