The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Sep. 26, 2007
Hyoung-soo Ko, Seoul, KR;
Ju-hwan Jung, Seoul, KR;
Seung-bum Hong, Seongnam-si, KR;
Chul-min Park, Yongin-si, KR;
Hyoung-soo Ko, Seoul, KR;
Ju-hwan Jung, Seoul, KR;
Seung-bum Hong, Seongnam-si, KR;
Chul-min Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.