The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Feb. 04, 2008
Applicants:

Jong-jan Lee, Camas, WA (US);

Sakae Wada, Nara, JP;

Sheng Teng Hsu, Camas, WA (US);

Inventors:

Jong-Jan Lee, Camas, WA (US);

Sakae Wada, Nara, JP;

Sheng Teng Hsu, Camas, WA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.


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