The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Mar. 01, 2007
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof.