The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Mar. 06, 2006
Sergei V. Kalinin, Knoxville, TN (US);
Hans M. Christen, Knoxville, TN (US);
Arthur P. Baddorf, Knoxville, TN (US);
Vincent Meunier, Knoxville, TN (US);
Ho Nyung Lee, Oak Ridge, TN (US);
Sergei V. Kalinin, Knoxville, TN (US);
Hans M. Christen, Knoxville, TN (US);
Arthur P. Baddorf, Knoxville, TN (US);
Vincent Meunier, Knoxville, TN (US);
Ho Nyung Lee, Oak Ridge, TN (US);
UT-Battelle, LLC, Oak Ridge, TN (US);
Abstract
A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.