The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
May. 05, 2009
Hsien-chin Chiu, Taipei, TW;
Chao-sung Lai, Taoyuan, TW;
Bing-shan Hong, Banqiao, TW;
Chao-wei Lin, Fengyuan, TW;
S. E. Chow, Taipei, TW;
Ray-ming Lin, Xinzhuang, TW;
Yung-hsiang Lin, Taipei, TW;
Hsin-shun Huang, Xinzhuang, TW;
Hsien-Chin Chiu, Taipei, TW;
Chao-Sung Lai, Taoyuan, TW;
Bing-Shan Hong, Banqiao, TW;
Chao-Wei Lin, Fengyuan, TW;
S. E. Chow, Taipei, TW;
Ray-Ming Lin, Xinzhuang, TW;
Yung-Hsiang Lin, Taipei, TW;
Hsin-Shun Huang, Xinzhuang, TW;
Chang Gung University, Taoyuan County, TW;
Abstract
An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.