The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Apr. 17, 2008
Applicant:

Shinji Uya, Miyagi, JP;

Inventor:

Shinji Uya, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor substrate includes: a first semiconductor layer; an oxide layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the oxide layer; a first recess that is formed in the second semiconductor layer with extending from an upper face of the second semiconductor layer toward the first semiconductor layer, the first recess being formed at a position where an alignment mark for determining a forming position of an element which is to be built in the semiconductor substrate is to be formed; and an etching prevention layer that is inwardly formed from a position of an upper face of the first semiconductor layer, the position corresponding to the recess, the layer comprising a material that is prevented from being etched during etching of the first semiconductor layer.


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