The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Sep. 01, 2005
Yang Yang, Los Angeles, CA (US);
Haruo Kawakami, Hino, JP;
Yang Yang, Los Angeles, CA (US);
Haruo Kawakami, Hino, JP;
The Regents of the University of California, Oakland, CA (US);
Fuji Electric Holdings Co., Ltd., Kawasaki, JP;
Abstract
A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (source and drain) sandwich an intermediate layer of organic semiconductor material in which fine metallic particles are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can tunnel from one to the nest, so that a voltage impressed at the edge of the intermediate layer causes current to flow through the dispersed particles, and causes the entire layer to reach the impressed voltage. By varying the impressed voltage, the voltage of the intermediate layer is caused to vary, which controls conduction between the source and drain. By making the particles small, the proportion of open area between the particles remains large so the electrons have room to move around the particles and through the organic material in intermediate layer, allowing high currents to flow through the device.