The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7759658 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 20, 2010

Filed:

Apr. 06, 2009
Applicant:

Yoshiki Nakashima, Kyoto, JP;

Inventor:

Yoshiki Nakashima, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/12 (2006.01); H01J 3/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electrodes arranged in an ion beam traveling direction while forming first, second, and third gaps, said first and fourth electrodes being electrically grounded, wherein positions of centers of curvature of said first and third gaps of said unipotential lens coincide with a position of a scan center of said beam scanner, and wherein a position of a center of curvature of said second gap of said unipotential lens is shifted from the position of the scan center of said beam scanner toward a downstream or upstream side in the ion beam traveling direction.


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Nakashima, Yoshiki. (2010). Ion implanting apparatus (U.S. Patent No. 7759658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7759658

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